elektronische bauelemente SSG4401P -3.6 a, -150 v, r ds(on) 160 m ? p-ch enhancement mode power mosfet 10-sep-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -150 v gate-source voltage v gs 20 v t a = 25c -3.6 a continuous drain current 1 t a = 70c i d -3.1 a pulsed drain current 2 i dm -15 a continuous source current (diode conduction) 1 i s -4.1 a t a = 25c 3.1 w total power dissipation 1 t a = 70c p d 2.2 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 40 thermal resistance junction-ambient (max.) 1 steady state r ja 80 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. sop-8 millimeter millimeter ref. min. max. ref. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. s s s g d d d d
elektronische bauelemente SSG4401P -3.6 a, -150 v, r ds(on) 160 m ? p-ch enhancement mode power mosfet 10-sep-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs , i d = -250 a gate-body leakage current i gss - - 100 na v ds =0, v gs = 20v - - -1 v ds = -120v, v gs =0 zero gate voltage drain current i dss - - -25 a v ds = -120v, v gs =0, t j =55c on-state drain current 1 i d(on) -5 - - a v ds = -5v, v gs = -10v - - 160 v gs = -10v, i d = -2.8a drain-source on-resistance 1 r ds(on) - - 170 m v gs = -5.5v, i d = -2.3a forward transconductance 1 g fs - 38 - s v ds = -15v, i d = -2.8a diode forward voltage v sd - -0.76 - v i s = -2.1a, v gs =0 dynamic 2 input capacitance c iss - 7944 - output capacitance c oss - 290 - reverse transfer capacitance c rss - 262 - pf v ds =-15v v gs =0 f=1mhz total gate charge q g - 64 - gate-source charge q gs - 28 - gate-drain charge q gd - 32 - nc i d = -2.8a v ds = -75v v gs = -4.5v turn-on delay time t d(on) - 19 - rise time t r - 34 - turn-off delay time t d(off) - 130 - fall time t f - 67 - ns v ds = -75v i d = -2.8a v gen = -10v r l =26.8 r g =6 notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SSG4401P -3.6 a, -150 v, r ds(on) 160 m ? p-ch enhancement mode power mosfet 10-sep-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSG4401P -3.6 a, -150 v, r ds(on) 160 m ? p-ch enhancement mode power mosfet 10-sep-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
